ETUDE NUMERIQUE D'ECOULEMENTS IRROTATIONNELS INCOMPRESSIBLES A SURFACE LIBRE AVEC TENSION SUPERFICIELLE PAR UNE METHODE VARIATIONNELLEDUPRET F.1981; J. MEC.; ISSN 0021-7832; FRA; DA. 1981 PUBL. 1982; VOL. 20; NO 4; PP. 659-690; ABS. ENG; BIBL. 16 REF.Article

Application of asymptotic expansions to model two-dimensional induction heating systems. Part I: Calculation of electromagnetic field distributionBIOUL, F; DUPRET, F.IEEE transactions on magnetics. 2005, Vol 41, Num 9, pp 2496-2505, issn 0018-9464, 10 p.Article

Application of asymptotic expansions to model two-dimensional induction heating systems. Part II: Calculation of equivalent surface stresses and heat fluxBIOUL, F; DUPRET, F.IEEE transactions on magnetics. 2005, Vol 41, Num 9, pp 2506-2514, issn 0018-9464, 9 p.Article

Calculation of the temperature field in injection moldingDUPRET, F; VANDERSCHUREN, L.AIChE journal. 1988, Vol 34, Num 12, pp 1959-1972, issn 0001-1541Article

Sur le signe des valeurs propres du tenseur des extra-contraintes dans un écoulement de fluide de Maxwell = Extra-stress eigenvalues sign for a Maxwell fluid flowDUPRET, F; MARCHAL, J. M.Journal de mécanique théorique et appliquée. 1986, Vol 5, Num 3, pp 403-427, issn 0750-7240Article

Numerical simulation of crystal growth : influence of melt convection on global heat transfer and interface shapeRYCKMANS, Y; NICODEME, P; DUPRET, F et al.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 702-706, issn 0022-0248, 5 p., 2Conference Paper

On the consequence of discretization errors in the numerical calculation of viscoelastic flowDUPRET, F; MARCHAL, J. M; CROCHET, M. J et al.Journal of non-newtonian fluid mechanics. 1985, Vol 18, Num 2, pp 173-186, issn 0377-0257Article

Dynamic global simulation of the Czochralski process. II. Analysis of the growth of a germanium crystalVAN DEN BOGAERT, N; DUPRET, F.Journal of crystal growth. 1997, Vol 171, Num 1-2, pp 77-93, issn 0022-0248Article

A closure approximation for nematic liquid crystals based on the canonical distribution subspace theoryGROSSO, M; MAFFETTONE, P. L; DUPRET, F et al.Rheologica acta. 2000, Vol 39, Num 3, pp 301-310, issn 0035-4511Conference Paper

Isothermal and non-isothermal crystallization kinetics of Polyethylene terephthalate : Mathematical modeling and experimental measurementVERHOYEN, O; DUPRET, F; LEGRAS, R et al.Polymer engineering and science. 1998, Vol 38, Num 9, pp 1594-1610, issn 0032-3888Article

Dynamic global simulation of the Czochralski process. I. Principles of the methodVAN DEN BOGAERT, N; DUPRET, F.Journal of crystal growth. 1997, Vol 171, Num 1-2, pp 65-76, issn 0022-0248Article

A conformal Petrov-Galerkin method for convection-dominated problemsDELSAUTE, B; DUPRET, F.International journal for numerical methods in fluids. 2008, Vol 56, Num 8, pp 1077-1084, issn 0271-2091, 8 p.Conference Paper

Defect engineering of Czochralski single-crystal siliconSINNO, T; DORNBERGER, E; VON AMMON, W et al.Materials science & engineering. R, Reports. 2000, Vol 28, Num 5-6, pp 149-198, issn 0927-796XArticle

Prediction of thermo-mechanical properties for compression moulded compositesLIELENS, G; PIROTTE, P; COUNIOT, A et al.Composites. Part A, Applied science and manufacturing. 1998, Vol 29, Num 1-2, pp 63-70, issn 1359-835XConference Paper

Modelling in crystal growthDUPRET, F; DERBY, J. J; KAKIMOTO, K et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, issn 0022-0248, 407 p.Conference Proceedings

Use of an inhomogeneous magnetic field for silicon crystal growthKAKIMOTO, K; EGUCHI, M; OZOE, H et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 442-449, issn 0022-0248Conference Paper

Validation of strong magnetic field asymptotic models for dopant transport during semiconductor crystal growthMA, N; WALKER, J. S.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 401-409, issn 0022-0248Conference Paper

Transient computer simulation of a CZ crystal growth processDORNBERGER, E; VON AMMON, W; VAN DEN BOGAERT, N et al.Journal of crystal growth. 1996, Vol 166, Num 1-4, pp 452-457, issn 0022-0248Conference Paper

Global modelling of heat transfer in crystal growth furnacesDUPRET, F; NICODEME, P; RYCKMANS, Y et al.International journal of heat and mass transfer. 1990, Vol 33, Num 9, pp 1849-1871, issn 0017-9310Article

A numerical study of convection during THM growth of CdTe with ACRTBARZ, R. U; SABHAPATHY, P; SALCUDEAN, M et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 566-577, issn 0022-0248Conference Paper

Detailed modeling of three-dimensional chemical vapor depositionERN, A; GIOVANGIGLI, V; SMOOKE, M. D et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 670-679, issn 0022-0248Conference Paper

Measurement, modelling and simulation of defects in as-grown Czochralski siliconVANHELLEMONT, J; SENKADER, S; KISSINGER, G et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 353-362, issn 0022-0248Conference Paper

Modelling of the isothermal melt flow due to rotating magnetic fields in crystal growthBARZ, R. U; GERBETH, G; WUNDERWALD, U et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 410-421, issn 0022-0248Conference Paper

Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convectionFAINBERG, J; LEISTER, H.-J; MÜLLER, G et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 517-523, issn 0022-0248Conference Paper

Time-dependent simulation of Czochralski silicon crystal growthJÄRVINEN, J; NIEMINEN, R; TIIHONEN, T et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 468-476, issn 0022-0248Conference Paper